Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

وابستگی انرژی گذارهای اپتیکی در نانوساختارهای چاههای کوانتومی GaN/AlGaN به پهنای سد و چاه کوانتومی

Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...

investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy

Abstract Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates

Submitted for the MAR13 Meeting of The American Physical Society Comparative Study on Intersubband Absorption in AlGaN/GaN and AlInN/GaN Heterostructures Grown on Low-Defect Substrates COLIN EDMUNDS, LIANG TANG, JIAYI SHAO, DONGHUI LI, GEOFF GARDNER, MICHAEL MANFRA, OANA MALIS, Purdue University, ANDREW GRIER, ZORAN IKONIC, PAUL HARRISON, University of Leeds, DIMITRI ZAKHAROV, Brookhaven Nation...

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

Smooth N-polar InGaN/GaN and AlGaN/GaN multiquantum wells MQWs and heterostructures were grown by metal organic chemical vapor deposition on 0001 sapphire substrates with misorientation angles of 2° –5° toward the a-sapphire plane. For all investigated structures the tendency toward formation of multiatomic steps at the film surface and at interfaces increased with increasing misorientation ang...

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates